DocumentCode
2520029
Title
Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD technology
Author
Zhang, Peng ; Wang, Yuan ; Jia, Song ; Zhang, Xing
Author_Institution
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear
2010
fDate
15-17 Dec. 2010
Firstpage
1
Lastpage
4
Abstract
A study of two major types of LDMOS-SCR electrostatic discharge protection devices for 60V SOI BCD technology is presented. The difference of the P-anode implant positions influences the triggering mechanism of the two types of devices. The relationship between I-V behavior under ESD and the device parameter is studied. Heat dissipation capability of the device is also presented.
Keywords
BIMOS integrated circuits; MIS devices; cooling; electrostatic discharge; overcurrent protection; silicon-on-insulator; thyristors; LDMOS-SCR ESD protection device; LDMOS-SCR electrostatic discharge protection devices; P-anode implant positions; SOI BCD technology; device parameter; heat dissipation capability; triggering mechanism; voltage 60 V; Anodes; Robustness; LDMOS-SCR; SOI BCD Technology; triggering-voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-9997-7
Type
conf
DOI
10.1109/EDSSC.2010.5713671
Filename
5713671
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