Title :
Characterization of ZnO/DLC/Si SAW devices using FCVA-produced DLC films
Author :
Lee, M.H. ; Chang, S.M. ; Park, C.K. ; Lee, J.B. ; Park, J.S.
Author_Institution :
Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
Surface acoustic wave (SAW) filters were fabricated using a multilayer structure of ZnO/diamond-like carbon (DLC)/Si and frequency response characteristics were analyzed. DLC films were deposited with varying preparation conditions (substrate bias, deposition time, and N2 doping flow rate). The sp3 fraction, thickness, surface roughness, and resistivity of DLC films were measured as a function of deposition conditions. The center frequency of SAW devices with DLC-buffer was measured to be about 575 MHz, which was much higher than that (340 MHz) of ZnO/Si(100) SAW devices. The variation of center frequencies of DLC-buffer SAW devices showed almost the same trend as that of sp3 fractions of DLC films. By decreasing the thickness of DLC buffer layers, higher electro-mechanical coupling coefficient (Keff2), lower insertion loss (IL), and larger side-lobe rejection (SLR) levels were obtained.
Keywords :
diamond-like carbon; doping profiles; electromechanical effects; frequency response; interface structure; losses; piezoelectric thin films; surface acoustic wave filters; surface topography; vacuum arcs; vacuum deposition; zinc compounds; 340 MHz; 575 MHz; DLC buffer SAW devices; DLC film preparation conditions; DLC film thickness; FCVA-produced DLC films; N2 doping flow rate; SAW device center frequency; SAW filters; Si; ZnO-C-Si; ZnO/DLC/Si SAW devices; ZnO/diamond-like carbon/Si multilayer structure; deposition time; electro-mechanical coupling coefficient; filtered cathodic vacuum arc deposition; frequency response characteristics; insertion loss; piezoelectric ZnO; resistivity; side-lobe rejection level; sp3 fraction; substrate bias; surface acoustic wave filters; surface roughness; Acoustic waves; Diamond-like carbon; Doping; Filters; Frequency response; Nonhomogeneous media; Semiconductor films; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition, 2002. IEEE International
Print_ISBN :
0-7803-7082-1
DOI :
10.1109/FREQ.2002.1075859