Title :
Frequency multiplier design using BiCMOS-based multiple-peak NDR circuit
Author :
Gan, Kwang-Jow ; Wu, Ping-Feng ; Shie, Wu-Yan ; Tsai, Cheng-Hsiung ; Liang, Dong-Shang ; Cheng-Hsiung Tsai ; Yeh, Wen-Kuan
Author_Institution :
Dept. of Electr. Eng., Nat. Chiayi Univ., Chiayi, Taiwan
Abstract :
We demonstrate a novel frequency multiplier using the negative differential resistance (NDR) circuit based on the standard 0.35 μm BiCMOS technique. This NDR circuit is made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). We can obtain the three-peak NDR current-voltage (I-V) characteristics by connecting three MOS-HBT-NDR circuits in parallel. These I-V characteristics show high peak-to-valley current ratios with 7.5, 16.8, and 12.1 for three peaks, respectively. Using the folded I-V characteristics, we design a frequency multiplier which can multiply the input saw-tooth signal by a factor of four. The fabrication of this NDR-based frequency multiplier is easier and more convenient compared to the traditional resonant tunneling structure which is implemented by the complicated molecular-beam-epitaxy (MBE) system.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MOSFET; frequency multipliers; heterojunction bipolar transistors; BiCMOS-based multiple-peak NDR circuit; HBT; MOSFET; SiGe; current-voltage characteristics; frequency multiplier design; heteroj bipolar transistor; metal-oxide-semiconductor field-effect-transistor; molecular-beam-epitaxy system; negative differential resistance circuit; saw-tooth signal; size 0.35 mum; traditional resonant tunneling structure; RNA; Resonant tunneling devices; BiCMOS technique; frequency multiplier; negative differential resistance circuit;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713683
