DocumentCode
2520260
Title
Physical noise modelling of majority-carrier devices: an adjoint-network approach
Author
Ghione, G. ; Bellotti, E. ; Filicori, Fabio
Author_Institution
Dipartimento di Elettronica, Politecnico di Milano, Italy
fYear
1989
fDate
3-6 Dec. 1989
Firstpage
327
Lastpage
330
Abstract
A novel, two-dimensional technique for the physical noise modeling of monopolar devices, based on the impedance-field method, is presented. The impedance field is computed by means of an efficient approach based on the introduction of an adjoint problem, according to a method already successfully applied to noise analysis in lumped networks. The same approach can also be used for computing device sensitivities with respect to parameter variations. As an example, preliminary results are discussed relative to the application of the method to GaAs MESFETs.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; GaAs; GaAs MESFETs; adjoint problem; adjoint-network approach; computing device sensitivities; impedance-field method; majority-carrier devices; monopolar devices; physical noise modeling; semiconductors; two-dimensional technique; Computer networks; Electrodes; Fluctuations; Gallium arsenide; Green´s function methods; Impedance; MESFETs; Microscopy; Noise figure; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74290
Filename
74290
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