Characteristics of subband current ratio in double-gate MOSFET

Author

Lou, Haijun ; Lin, Xinnan ; Zhang, Ning ; Zhang, Xukai ; Xu, Jiaajiao ; Wu, Wen ; Liu, Zhiwei ; Wang, Wenping ; Zhao, Wei ; Ma, Yong ; He, Frank ; Chan, Mansun

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

The subband current is evaluated by solving the non-equilibrium Green´s function (NEGF) self-consistently with Poisson´s equation for the double-gate MOSFETs with different channel lengths and thicknesses. The characteristics of subband current ratio and the details of subband number M are simulated, and the results show that the characteristics of current are determined by the first subband when T_Si is smaller than 2.5nm, while the value of T_Si is between 3.5nm and 5nm, the current of the second subband needs to be considered. The subband current ratios are highly related to the gate voltage, while less sensitive to the channel length. The suitable subband number M is also discussed for the devices with different sizes, which must be considered in balancing the model accuracy and the efficiency.

Keywords

Green´s function methods; MOSFET; Poisson equation; electric current; Poisson equation; channel length; channel thickness; double gate MOSFET; gate voltage; nonequilibrium Green´s function; subband current ratio; subband number; Analytical models; MOSFETs; Nanowires; M; NEGF; double-gate; subband current ratio;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713686

Filename

5713686