A simple technique for improving the IM3/C and PAE performance of MESFET amplifiers

Author

Wong, J N H ; Aitchison, C.S.

Author_Institution

Microwave Syst. Res. Group, Surrey Univ., Guildford, UK

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

281

Abstract

This paper shows by simulation that a shunt short-circuited λ/4 line placed across the drain terminals of a microwave MESFET amplifier significantly improves both the IM3/C and 2-tone PAE performance by a maximum of 14 dB and 3% (from 24.5% to 27.5%), respectively. Practical confirmation with both WCDMA and GSM-EDGE input signals is obtained with a microstrip amplifier at 2 GHz, demonstrating an average improvement in ACPR of 12.5 dB and a reduction in EVM from 5.0% to 1.3% respectively. The technique is novel, simple and practical and will be of direct interest to designers of base station amplifiers.

Keywords

MESFET integrated circuits; MMIC power amplifiers; cellular radio; circuit simulation; code division multiple access; field effect MMIC; integrated circuit measurement; integrated circuit modelling; intermodulation distortion; microstrip circuits; 2 GHz; 24.5 percent; 27.5 percent; ACPR; EVM; GSM-EDGE input signals; IM3/C performance; MESFET amplifiers; PAE performance; WCDMA; base station amplifier design; drain terminals; microstrip amplifier; microwave MESFET amplifier; shunt short-circuited quarter-wave line; simulation; Circuit simulation; Frequency; Impedance; Linearity; MESFETs; Microstrip; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262274

Filename

1262274