A magnetically shielded instrument for magnetoresistance and noise characterizations of magnetic tunnel junction sensors

Author

Lei, Z.Q. ; Li, G.J. ; Lai, P.T. ; Pong, Philip W T ; Egelhoff, William F., Jr.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

A magnetically shielded setup was developed for characterizing magnetoresistance (MR) and noise properties of magnetic tunneling junction (MTJ) sensors. A mu-metal shielding is installed to avoid the interference of external magnetic disturbance. Both MR curves and noise power spectra of MTJ sensors can be obtained for further data analysis. Moreover, a hard-axis magnetic field can be applied to eliminate the hysteresis and the linear field response of MTJ sensors can be measured. The preliminary measurement results on MTJ sensors are presented to illustrate the characterization capabilities of this setup.

Keywords

1/f noise; data analysis; magnetic sensors; tunnelling magnetoresistance; MR curves; MTJ sensors; data analysis; hard-axis magnetic field; linear field response; magnetic disturbance; magnetic tunneling junction sensors; magnetically shielded instrument; magnetoresistance; mu-metal shielding; noise characterization; noise power spectra; noise property; Annealing; Magnetic noise; Magnetic shielding; Magnetic tunneling; Navigation; Noise measurement; Tunneling magnetoresistance; 1/f noise; mangetic tunnel junction (MTJ); measurement setup; tunneling magnetoresistance (TMR);

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713688

Filename

5713688