A low noise charge sensitive amplifier with adjustable leakage compensation in 0.18µm CMOS process

Author

Li, XiangYu ; Zhang, Qi ; Sun, Yihe

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

Gate leakage of charge sensitive amplifier (CSA) in deep submicron process not only increases noise but also impacts the DC voltage of preamplifier output. This paper proposes a CSA for CdZnTe particle detector readout implemented in 0.18μm CMOS process including its new reset and leakage compensation configuration which has low noise and short reset time, especially, is adjustable to fit leakage current variation. This design is tape out verified. The test chip achieves 250e equivalent noise charge. And its reset time is adjustable indeed.

Keywords

CMOS integrated circuits; II-VI semiconductors; cadmium compounds; compensation; leakage currents; low noise amplifiers; particle detectors; preamplifiers; readout electronics; semiconductor counters; zinc compounds; CMOS process; CSA; CdZnTe; DC voltage; adjustable leakage compensation; deep submicron process; equivalent noise charge; gate leakage; leakage compensation configuration; leakage current variation; low noise charge sensitive amplifier; particle detector readout; preamplifier output; size 0.18 mum; test chip; CMOS integrated circuits; MOSFET circuits; charge sensitive amplifier; gate leakage; particle detection; reset configuration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713693

Filename

5713693