Two-dimensional quantum mechanical simulation of gate leakage current of nanoscale MOSFETs

The gate leakage current is investigated for nanoscale double-gate MOSFET with the nonequilibrium Green´s function method. The contact block reduction technique is adopted for computational efficiency with accurate physical description. Two-dimensional self-consistent Schrodinger-Poisson solver with open boundaries is used to capture the quantum mechanical nature of carrier transport. The gate leakage current can be obtained with either the Landauer equation or the electron Green´s function. The gate current dependence on source/drain doping density, body thickness, oxide thickness, gate voltage, as well as the temperature is investigated.