Title :
Circuit reliability simulator-oxide breakdown module
Author :
Rosenbaum, E. ; Lee, P.M. ; Moazzami, R. ; Ko, P.K. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A computer program which generates statistics about circuit failures due to MOS oxide breakdown has been developed. The program, CORS (Circuit Oxide Reliability Simulator), predicts the probability of circuit failure as a function of operating time, temperature, power supply voltage, and input waveforms. It consists of a preprocessor and postprocessor for SPICE. CORS calculates the probability of failure by using the node voltages provided by SPICE and oxide defect statistics provided by the user. The effect of burn-in on oxide reliability can also be simulated. CORS is linked to a hot electron and an electromigration reliability simulator. Simulation results are presented.<>
Keywords :
CMOS integrated circuits; MOS integrated circuits; circuit analysis computing; circuit reliability; electric breakdown of solids; failure analysis; CMOS circuits; CORS; MOS circuits; MOS oxide breakdown; SPICE; circuit failures; circuit reliability simulator; computer program; electromigration reliability simulator; hot electron; input waveforms; node voltages; operating time; oxide defect statistics; oxide reliability; postprocessor; power supply voltage; preprocessor; temperature; Circuit simulation; Computational modeling; Electric breakdown; Power supplies; Predictive models; Probability; SPICE; Statistics; Temperature distribution; Voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74291
