Title :
A Model for ovonic threshold switch of amorphous GST based on hopping transport process
Author :
Wang, Wei ; Lin, Xinnan ; Wei, Yiqun ; Wang, Laidong ; Wang, Ling ; He, Jin ; Zhang, Xing
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
This paper presents an OTS model for PCM application based on the hopping transport process, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability model is presented according to the Abrahams-Miller formula, meanwhile an equivalent capacitor model is presented to depict the charge distribution in the amorphous GST. By coupling the hopping probability model and the capacitor model, the OTS I-V characteristic for OTS effect with different geometry and trap density are achieved, and the results agree with those from the reported measurements data.
Keywords :
organic semiconductors; probability; semiconductor device models; semiconductor switches; Abrahams-Miller formula; PCM application; amorphous GST; equivalent hopping probability model; hopping transport process; organic semiconductor device simulation; ovonic threshold switch; Delta modulation; Materials; Monte Carlo; chalcogenide glasses; charge transport;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713697
