DocumentCode
2520475
Title
Effect of Passivation Opening on Electromigration in Eutectic SnPb Solder Joints
Author
Shen, F.J. ; Chen, Chih
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2008
fDate
9-12 Dec. 2008
Firstpage
1154
Lastpage
1159
Abstract
Effect of passivation opening on electromigration in eutectic SnPb solder joints is investigated in this study. Solder bumps were fabricated with a polyimide (PI) and without a PI layer. Both sets of solder joints were subjected to electromigration tests by 0.8A at 150°C. Kelvin probes were employed to monitor the increase in bump resistance during electromigration. The bump failure is defined when the bump resistance increase to 100% of its initial value. It is found that the failure time is different for the two joints and the failure occurs in different locations for the two joints. 3D simulation on current density is performed to examine the difference in current distribution for the two joints. It is found that the current density distribution plays key roles in the failure location of electromigration.
Keywords
current density; electrical resistivity; electromigration; flip-chip devices; lead alloys; passivation; solders; tin alloys; 3D simulation; Kelvin probes; SnPb; bump resistance; current density distribution; electromigration; eutectic solder joints; flip-chip bumps; passivation opening; polyimide; solder bumps; temperature 150 degC; Condition monitoring; Current density; Current distribution; Electromigration; Kelvin; Passivation; Polyimides; Probes; Soldering; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location
Singapore
Print_ISBN
978-1-4244-2117-6
Electronic_ISBN
978-1-4244-2118-3
Type
conf
DOI
10.1109/EPTC.2008.4763585
Filename
4763585
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