• DocumentCode
    2520475
  • Title

    Effect of Passivation Opening on Electromigration in Eutectic SnPb Solder Joints

  • Author

    Shen, F.J. ; Chen, Chih

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2008
  • fDate
    9-12 Dec. 2008
  • Firstpage
    1154
  • Lastpage
    1159
  • Abstract
    Effect of passivation opening on electromigration in eutectic SnPb solder joints is investigated in this study. Solder bumps were fabricated with a polyimide (PI) and without a PI layer. Both sets of solder joints were subjected to electromigration tests by 0.8A at 150°C. Kelvin probes were employed to monitor the increase in bump resistance during electromigration. The bump failure is defined when the bump resistance increase to 100% of its initial value. It is found that the failure time is different for the two joints and the failure occurs in different locations for the two joints. 3D simulation on current density is performed to examine the difference in current distribution for the two joints. It is found that the current density distribution plays key roles in the failure location of electromigration.
  • Keywords
    current density; electrical resistivity; electromigration; flip-chip devices; lead alloys; passivation; solders; tin alloys; 3D simulation; Kelvin probes; SnPb; bump resistance; current density distribution; electromigration; eutectic solder joints; flip-chip bumps; passivation opening; polyimide; solder bumps; temperature 150 degC; Condition monitoring; Current density; Current distribution; Electromigration; Kelvin; Passivation; Polyimides; Probes; Soldering; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-2117-6
  • Electronic_ISBN
    978-1-4244-2118-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2008.4763585
  • Filename
    4763585