Title :
Modeling of flicker noise in n-channel FinFETs: Mobility fluctuations in the subthreshold region
Author :
Pandit, Srabanti ; Syamal, Binit ; Sarkar, C.K.
Author_Institution :
Electron. & Telecommun. Eng. Dept., Jadavpur Univ., Kolkata, India
Abstract :
In this work, the flicker noise in n-channel FinFETs has been modeled. The model has been developed by considering both mobility and carrier number fluctuations in the weak, moderate and strong inversion regions of operation of FinFETs. It has been demonstrated that mobility fluctuations cannot be neglected in FinFETs under the weak inversion region of its operation. For validation purpose, the model results have been verified with experimental data. Good agreement between the model results and experimental data has been observed.
Keywords :
MOSFET; semiconductor device noise; carrier number fluctuation; flicker noise modeling; mobility fluctuation; n-channel FinFET; subthreshold region; 1f noise; FinFETs; Fluctuations; Logic gates; Scattering; FinFET; flicker noise; mobility fluctuations; power spectral density;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713699
