A high breakdown voltage and low switching loss GaN schottky diode using CHF3 plasma treatment

Author

Peng, Sheng-Wen ; Yang, Chih-Wei ; Cheng, Chao-Hung ; Lin, Che-Kai ; Chiu, Hsien-Chin

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

3

Abstract

In this study, the circular Schottky diodes fabricated on a standard AlGaN/GaN epitaxial wafer with fluorine ions plasma CF₄ and CHF₃ treatment technology were proposed. The Schottky diode with 60sec CHF₃ plasma treated exhibits a high breakdown voltage of -352V, and a low reverse leakage current of 10^-7A. It also presented low switching loss and high stability. According the outstanding performance, we proposed circular Schottky diode with CHF₃ plasma treated was promising in converter circuit applications.

Keywords

Schottky diodes; convertors; epitaxial layers; fluorine compounds; leakage currents; plasma materials processing; power semiconductor devices; semiconductor device breakdown; AlGaN-GaN; CF₄; CHF₃; breakdown voltage; circular Schottky diodes; converter circuit applications; fluorine ions plasma treatment technology; low switching loss Schottky diode; reverse leakage current; standard epitaxial wafer; HEMTs; MOCVD; Plasma measurements; Rectifiers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713710

Filename

5713710