Title :
Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET
Author :
Wang, Shaodi ; Guo, Xinjie ; Zhang, Lining ; Chenfei Zhang ; He, Frank ; Chan, Mansun
Abstract :
In this paper an analytic subthreshold potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed. This model is derived by solving the Poisson´s equation with the parabolic potential approximation, channel length transformation and conformal mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed model shows good agreements, with different dimensions of the structure and varied bias conditions. The model here is appropriate for predicting the effect of gate misalignment or asymmetric gate underlap in GAA MOSFETs´ design.
Keywords :
MOSFET; Poisson equation; semiconductor device models; GAA MOSFET; Poisson equation; analytical subthreshold channel potential model; asymmetric gate underlap; channel length transformation; conformal mapping; cylindrical gate-all-around MOSFET; gate misalignment; parabolic potential approximation; Analytical models; Integrated circuit modeling; Logic gates; MOSFET circuits; Predictive models; Three dimensional displays; asymmetric; gate-all-around; misalinment; underlap;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713711
