Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET

Author

Wang, Shaodi ; Guo, Xinjie ; Zhang, Lining ; Chenfei Zhang ; He, Frank ; Chan, Mansun

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

In this paper an analytic subthreshold potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed. This model is derived by solving the Poisson´s equation with the parabolic potential approximation, channel length transformation and conformal mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed model shows good agreements, with different dimensions of the structure and varied bias conditions. The model here is appropriate for predicting the effect of gate misalignment or asymmetric gate underlap in GAA MOSFETs´ design.

Keywords

MOSFET; Poisson equation; semiconductor device models; GAA MOSFET; Poisson equation; analytical subthreshold channel potential model; asymmetric gate underlap; channel length transformation; conformal mapping; cylindrical gate-all-around MOSFET; gate misalignment; parabolic potential approximation; Analytical models; Integrated circuit modeling; Logic gates; MOSFET circuits; Predictive models; Three dimensional displays; asymmetric; gate-all-around; misalinment; underlap;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713711

Filename

5713711