Studies of GaPO4 crystals and resonators

Author

Zarka, A. ; Capelle, B. ; Detaint, J. ; Palmier, D. ; Philippot, E. ; Zvereva, O.V.

Author_Institution

Univ. Pierre et Marie Curie, Paris, France

fYear

1996

fDate

5-7 Jun 1996

Firstpage

66

Lastpage

71

Abstract

The crystalline quality of GaPO4 samples grown in different conditions, often selected to reduce the OH concentration, have been studied using the X-ray topographic technique with the synchrotron radiation delivered at the L.U.R.E. (Orsay, France). During this study, the high level of crystalline quality observed for some samples has indicated that gallium phosphate crystals could reach a perfection comparable to quartz. The Q factors and the piezoelectric properties of plates cut in the same crystals were measured. The results were compared with others obtained with older crystals and with results computed using the most recent constants available. This comparison indicates that the very reduced OH concentrations now obtained leads to an increase of the shear velocities and to very reduced variations of the insertions losses with temperature

Keywords

Q-factor measurement; X-ray diffraction; X-ray topography; crystal growth from solution; crystal resonators; gallium compounds; piezoelectric materials; GaPO₄; OH concentration; Q factors; X-ray topographic technique; crystal growth; crystal resonators; crystalline quality; gallium phosphate crystals; insertions losses; piezoelectric properties; shear velocities; synchrotron radiation; Crystalline materials; Crystallization; Crystallography; Crystals; Q factor; Solvents; Surfaces; Synchrotron radiation; Telecommunications; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-3309-8

Type

conf

DOI

10.1109/FREQ.1996.559820

Filename

559820