Title :
Submicron MILC TFT performance enhancement by crystallization after patterning
Author :
Li, Lin ; Chan, Mansun
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
The performances of thin-film-transistors (TFTs) with the channel region crystallized by metal-induced-lateral-crystallization (MILC) before and after patterning are compared. TFTs are experimentally fabricated to study current drive, off-state leakage current, subthreshold slope, threshold voltage, and drain induced barrier lower (DIBL). The superiorities of TFTs with channel crystallized after patterning over the ones with channel crystallized before patterning are demonstrated. The advantage can be further enhanced by using the ladder layout.
Keywords :
crystallisation; leakage currents; thin film transistors; DIBL; channel crystallization; current drive; drain induced barrier lower; metal-induced-lateral-crystallization; off-state leakage current; patterning; submicron MILC TFT performance enhancement; subthreshold slope; thin film transistor; threshold voltage; Crystallization; Films; Layout; Nickel; Performance evaluation; Silicon; Thin film transistors; MILC; system on panel; thin film transistor;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713713
