Submicron MILC TFT performance enhancement by crystallization after patterning

Author

Li, Lin ; Chan, Mansun

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

The performances of thin-film-transistors (TFTs) with the channel region crystallized by metal-induced-lateral-crystallization (MILC) before and after patterning are compared. TFTs are experimentally fabricated to study current drive, off-state leakage current, subthreshold slope, threshold voltage, and drain induced barrier lower (DIBL). The superiorities of TFTs with channel crystallized after patterning over the ones with channel crystallized before patterning are demonstrated. The advantage can be further enhanced by using the ladder layout.

Keywords

crystallisation; leakage currents; thin film transistors; DIBL; channel crystallization; current drive; drain induced barrier lower; metal-induced-lateral-crystallization; off-state leakage current; patterning; submicron MILC TFT performance enhancement; subthreshold slope; thin film transistor; threshold voltage; Crystallization; Films; Layout; Nickel; Performance evaluation; Silicon; Thin film transistors; MILC; system on panel; thin film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713713

Filename

5713713