DocumentCode :
2520792
Title :
Defect structure of Langasite-type crystals: a challenge for applications
Author :
Klemenz, C. ; Berkowski, M. ; Deveaud-Pledran, B. ; Malocha, D.C.
Author_Institution :
Adv. Mater. Process. & Anal. Center, Univ. of Central Florida, Orlando, FL, USA
fYear :
2002
fDate :
2002
Firstpage :
301
Lastpage :
306
Abstract :
Whereas quartz crystals are grown hydrothermally, langasites are grown from the melt, by Czochralski. Particularities of this growth method and inherent physicochemical properties of these materials lead to a specific defect structure, which actually limits reproducibility in device parameters. In this study, crystals and wafers grown in different laboratories worldwide have been investigated. Striations, inclusions, voids, dislocations, and faceting effects are discussed in terms of their origin and 3D distribution/pattern within the samples, and their effects on device properties (when known). Ways to improve the quality of Czochralski grown langasites and ideas for future materials developments are also given.
Keywords :
crystal growth from melt; dislocations; gallium compounds; inclusions; lanthanum compounds; voids (solid); Czochralski growth; La3Ga5.5Nb0.5O14; La3Ga5.5Ta0.5O14; La3Ga5SiO14; defect structure; dislocations; faceting; inclusions; langasite-type crystals; striations; voids; Crystalline materials; Crystallization; Crystals; Grain boundaries; Impurities; Laboratories; Materials processing; Physics; Reproducibility of results; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium and PDA Exhibition, 2002. IEEE International
Print_ISBN :
0-7803-7082-1
Type :
conf
DOI :
10.1109/FREQ.2002.1075896
Filename :
1075896
Link To Document :
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