DocumentCode
2520792
Title
Defect structure of Langasite-type crystals: a challenge for applications
Author
Klemenz, C. ; Berkowski, M. ; Deveaud-Pledran, B. ; Malocha, D.C.
Author_Institution
Adv. Mater. Process. & Anal. Center, Univ. of Central Florida, Orlando, FL, USA
fYear
2002
fDate
2002
Firstpage
301
Lastpage
306
Abstract
Whereas quartz crystals are grown hydrothermally, langasites are grown from the melt, by Czochralski. Particularities of this growth method and inherent physicochemical properties of these materials lead to a specific defect structure, which actually limits reproducibility in device parameters. In this study, crystals and wafers grown in different laboratories worldwide have been investigated. Striations, inclusions, voids, dislocations, and faceting effects are discussed in terms of their origin and 3D distribution/pattern within the samples, and their effects on device properties (when known). Ways to improve the quality of Czochralski grown langasites and ideas for future materials developments are also given.
Keywords
crystal growth from melt; dislocations; gallium compounds; inclusions; lanthanum compounds; voids (solid); Czochralski growth; La3Ga5.5Nb0.5O14; La3Ga5.5Ta0.5O14; La3Ga5SiO14; defect structure; dislocations; faceting; inclusions; langasite-type crystals; striations; voids; Crystalline materials; Crystallization; Crystals; Grain boundaries; Impurities; Laboratories; Materials processing; Physics; Reproducibility of results; Surface acoustic waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium and PDA Exhibition, 2002. IEEE International
Print_ISBN
0-7803-7082-1
Type
conf
DOI
10.1109/FREQ.2002.1075896
Filename
1075896
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