• DocumentCode
    2520792
  • Title

    Defect structure of Langasite-type crystals: a challenge for applications

  • Author

    Klemenz, C. ; Berkowski, M. ; Deveaud-Pledran, B. ; Malocha, D.C.

  • Author_Institution
    Adv. Mater. Process. & Anal. Center, Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    301
  • Lastpage
    306
  • Abstract
    Whereas quartz crystals are grown hydrothermally, langasites are grown from the melt, by Czochralski. Particularities of this growth method and inherent physicochemical properties of these materials lead to a specific defect structure, which actually limits reproducibility in device parameters. In this study, crystals and wafers grown in different laboratories worldwide have been investigated. Striations, inclusions, voids, dislocations, and faceting effects are discussed in terms of their origin and 3D distribution/pattern within the samples, and their effects on device properties (when known). Ways to improve the quality of Czochralski grown langasites and ideas for future materials developments are also given.
  • Keywords
    crystal growth from melt; dislocations; gallium compounds; inclusions; lanthanum compounds; voids (solid); Czochralski growth; La3Ga5.5Nb0.5O14; La3Ga5.5Ta0.5O14; La3Ga5SiO14; defect structure; dislocations; faceting; inclusions; langasite-type crystals; striations; voids; Crystalline materials; Crystallization; Crystals; Grain boundaries; Impurities; Laboratories; Materials processing; Physics; Reproducibility of results; Surface acoustic waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium and PDA Exhibition, 2002. IEEE International
  • Print_ISBN
    0-7803-7082-1
  • Type

    conf

  • DOI
    10.1109/FREQ.2002.1075896
  • Filename
    1075896