Title :
Influence of collector region design on SiGe power HBT linearity characteristics
Author :
Qin, Guoxuan ; Jianguo Ma ; Wang, Guogong ; Ma, Zhenqiang ; Pingxi Ma ; Racanelli, Marco
Abstract :
The influence of collector region design (used to realize different breakdown voltages) on the linearity characteristics of SiGe power HBTs is investigated experimentally via the measurements of third order intermodulation distortion (IMD3). It is shown that collector doping concentration has significant influence on devices´ characteristics. SiGe power HBTs with higher collector doping concentration exhibit both better linearity characteristic and better RF power performance than the low collector doping concentration HBTs.
Keywords :
Ge-Si alloys; distortion; heterojunction bipolar transistors; microwave bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor doping; semiconductor materials; SiGe; collector region design; frequency 4 GHz; low collector doping concentration HBT; power HBT linearity characteristics; third order intermodulation distortion measurement; Doping; Heterojunction bipolar transistors; Linearity; Performance evaluation; Power amplifiers; Power generation; Silicon germanium; Collector; HBT; IMD3; SiGe; common-emitter; large-signal; linearity; third order intermodulation distortion;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713716
