Influence of collector region design on SiGe power HBT linearity characteristics

Author

Qin, Guoxuan ; Jianguo Ma ; Wang, Guogong ; Ma, Zhenqiang ; Pingxi Ma ; Racanelli, Marco

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

The influence of collector region design (used to realize different breakdown voltages) on the linearity characteristics of SiGe power HBTs is investigated experimentally via the measurements of third order intermodulation distortion (IMD3). It is shown that collector doping concentration has significant influence on devices´ characteristics. SiGe power HBTs with higher collector doping concentration exhibit both better linearity characteristic and better RF power performance than the low collector doping concentration HBTs.

Keywords

Ge-Si alloys; distortion; heterojunction bipolar transistors; microwave bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor doping; semiconductor materials; SiGe; collector region design; frequency 4 GHz; low collector doping concentration HBT; power HBT linearity characteristics; third order intermodulation distortion measurement; Doping; Heterojunction bipolar transistors; Linearity; Performance evaluation; Power amplifiers; Power generation; Silicon germanium; Collector; HBT; IMD3; SiGe; common-emitter; large-signal; linearity; third order intermodulation distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713716

Filename

5713716