DocumentCode
2520874
Title
Impact of the CMP Process on the Multilevel Stack Mechanical Reliability
Author
Moreau, S. ; Barbé, J. -C ; Leduc, P. ; Maitrejean, S. ; Passemard, G.
Author_Institution
CEA-LETI - MINATEC, Grenoble, France
fYear
2008
fDate
9-12 Dec. 2008
Firstpage
1264
Lastpage
1269
Abstract
The Chemical-Mechanical Polishing (CMP) process is still challenging for the semiconductor industry: during this key step, decohesion/adhesion fracture often occurs. The authors have developed a specific methodology in order to estimate this potential risk. This methodology uses finite element simulations in conjunction with a post-treatment computing the Energy Release Rate (ERR) which is related to the risk of delamination To perform the ERR calculation, the Virtual Crack Closure Technique (VCCT) was implemented. This methodology was used for ULK/Cu integration and was validated through experiments. The impact of the process on the wafer residual stress was exhibit. From the fracture point of view, the authors confirm the delamination increases with ULK levels and with lower dielectric elastic modulus.
Keywords
adhesion; chemical mechanical polishing; copper; cracks; delamination; elastic moduli; finite element analysis; fracture; internal stresses; low-k dielectric thin films; reliability; CMP; adhesion fracture; chemical-mechanical polishing; decohesion fracture; delamination; dielectric; elastic modulus; energy release rate; finite element simulations; mechanical reliability; multilevel stack; post-treatment computing; ultra low-dielectric-constant film; virtual crack closure technique; wafer residual stress; Adhesives; Chemical industry; Chemical processes; Copper; Delamination; Dielectrics; Electronics industry; Finite element methods; Planarization; Residual stresses; Chemical Mechanical Polishing (CMP); Delamination; Finite Element simulation; Virtual Crack Closure Technique (VCCT);
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location
Singapore
Print_ISBN
978-1-4244-2117-6
Electronic_ISBN
978-1-4244-2118-3
Type
conf
DOI
10.1109/EPTC.2008.4763604
Filename
4763604
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