Title :
Enhancement of performance and reliability of amorphous silicon high voltage thin film transistors by use of field plates
Author :
Martin, R.A. ; Yap, P.K. ; Shaw, J.G. ; Hack, M. ; Sugiura, N. ; Hamano, T.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
An enhancement to the amorphous silicon (a-Si) high-voltage thin-film transistor (HVTFT) is described. With the addition of a field plate over a portion of the device, stability is enhanced. Weak accumulation of a-Si prevents the formation of additional metastable electronic defects that cause changes in I/sub D/ vs. V/sub D/. The effects of structural variations are described, and the improved stability is demonstrated.<>
Keywords :
amorphous semiconductors; elemental semiconductors; power transistors; reliability; silicon; thin film transistors; amorphous Si; field plates; high voltage thin film transistors; metastable electronic defects; performance enhancement; reliability; stability; structural variations; weak accumulation; Amorphous silicon; Artificial intelligence; Chromium; Laboratories; Passivation; Space charge; Stability; Stress; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74293
