DocumentCode
2520952
Title
Phosphorous diffusions for gettering-induced improvement of lifetime in various silicon materials
Author
Gee, James M.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
118
Abstract
The effect of phosphorous diffusion on the excess-carrier lifetime in various silicon materials is investigated. The optimum phosphorous diffusion schedule and enhancement of lifetime was found to be material specific, with substantial (five-fold) increases found for some materials. Possible reasons for the variability of phosphorous gettering with different materials is discussed
Keywords
carrier lifetime; diffusion in solids; elemental semiconductors; getters; phosphorus; silicon; Si:P; excess-carrier lifetime; gettering-induced improvement; phosphorous diffusion; Crystalline materials; Dry etching; Fabrication; Gettering; Glass; Impurities; Laboratories; Oxidation; Photovoltaic cells; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169193
Filename
169193
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