Title :
Phosphorous diffusions for gettering-induced improvement of lifetime in various silicon materials
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
The effect of phosphorous diffusion on the excess-carrier lifetime in various silicon materials is investigated. The optimum phosphorous diffusion schedule and enhancement of lifetime was found to be material specific, with substantial (five-fold) increases found for some materials. Possible reasons for the variability of phosphorous gettering with different materials is discussed
Keywords :
carrier lifetime; diffusion in solids; elemental semiconductors; getters; phosphorus; silicon; Si:P; excess-carrier lifetime; gettering-induced improvement; phosphorous diffusion; Crystalline materials; Dry etching; Fabrication; Gettering; Glass; Impurities; Laboratories; Oxidation; Photovoltaic cells; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169193
