Title :
GaPO4 resonators with Q factors of some millions in the fundamental mode
Author :
Krispel, F. ; Thanner, H. ; Krempl, P.W. ; Reiter, C. ; Worsch, P.M. ; Wallnöfer, W.
Author_Institution :
Phys. Res., AVL List GmbH, Graz, Austria
Abstract :
Gallium orthophosphate (GaPO4) is a novel, synthetic piezoelectric crystal which is homeotypic to quartz. Most physical properties are stable until 970°C. New applications are thickness shear resonators (fundamental mode) with a cut angle near Y-84° and very low coupling coefficients which have shown very high Q factors (Reiter et al, Proc. 15th Euro. Freq. and Time Forum, pp. 50-54, 2001), and thus it is called the HiQ cut. The temperature behavior and the electrical equivalent circuits of some new HiQ resonators are investigated with a HP network analyzer and an oscillator. The oscillator had a special design because of the high motional resistances of the HiQ resonators (several kΩ at normal pressure conditions which decrease to several hundreds of Q under vacuum conditions). The highest Q factors (up to 13×106) are obtained with the network analyzer at a pressure of about 0.04 mbar. The next measurements are focused on short term stability to obtain oscillators with very low noise.
Keywords :
Q-factor; crystal resonators; equivalent circuits; gallium compounds; network analysers; piezoelectric materials; thermal analysis; thermal stability; 0.04 mbar; 970 C; GaPO4; GaPO4 resonators; HP network analyzer; HiQ cut; HiQ resonators; Q factor; crystal cut angle; electrical equivalent circuits; fundamental mode; gallium orthophosphate synthetic piezoelectric crystal; motional resistances; oscillator design; physical properties stability; pressure conditions; quartz homeotypic piezoelectric crystal; short term stability; temperature behavior; thickness shear resonators; vacuum conditions; very low noise oscillators; Capacitance; Crystalline materials; Damping; Electrodes; Oscillators; Q factor; RLC circuits; Resonance; Resonant frequency; Temperature;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition, 2002. IEEE International
Print_ISBN :
0-7803-7082-1
DOI :
10.1109/FREQ.2002.1075906