Title :
A large-signal model for GaInP/GaAs heterojunction bipolar transistors
Author :
Shi, Yuxia ; He, Yu ; Wang, Lin ; Wang, Yan
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Based on the Gummel-Poon (GP) model, a simple and physical-based large-signal model for GaInP/GaAs heterojunction bipolar transistors (HBTs) is presented in this paper. We improve the current and transit time model by considering the potential spike effect and negative differential mobility. Different from the UCSD HBT and AgilentHBT models, only 46 parameters are used in our model. The DC characteristics and S-parameter curves are well consistent with the experimental data over a wide range of the operating bias.
Keywords :
S-parameters; gallium arsenide; heterojunction bipolar transistors; indium compounds; AgilentHBT models; DC characteristics; GP model; Gummel-Poon model; S-parameter curves; UCSD HBT; current time model; heterojunction bipolar transistors; large-signal model; negative differential mobility; operating bias; potential spike effect; transit time model; Current measurement; Delay; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Junctions; Solid modeling; GaInP/GaAs; HBT; large signal model;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713730
