A large-signal model for GaInP/GaAs heterojunction bipolar transistors

Author

Shi, Yuxia ; He, Yu ; Wang, Lin ; Wang, Yan

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

Based on the Gummel-Poon (GP) model, a simple and physical-based large-signal model for GaInP/GaAs heterojunction bipolar transistors (HBTs) is presented in this paper. We improve the current and transit time model by considering the potential spike effect and negative differential mobility. Different from the UCSD HBT and AgilentHBT models, only 46 parameters are used in our model. The DC characteristics and S-parameter curves are well consistent with the experimental data over a wide range of the operating bias.

Keywords

S-parameters; gallium arsenide; heterojunction bipolar transistors; indium compounds; AgilentHBT models; DC characteristics; GP model; Gummel-Poon model; S-parameter curves; UCSD HBT; current time model; heterojunction bipolar transistors; large-signal model; negative differential mobility; operating bias; potential spike effect; transit time model; Current measurement; Delay; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Junctions; Solid modeling; GaInP/GaAs; HBT; large signal model;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713730

Filename

5713730