Title :
A compact model of diode array for Phase Change Memory
Author :
Yanmei Su ; Wang, Laidong ; Wang, Ruonan ; Xukai Zhang ; Wei, Yiqun ; Wang, Wei ; Ma, Yong ; Xinnan Lin ; Jin He
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
In this paper, a compact diode array model for Phase Change Memory (PCM) application is presented. From the diode array structure and numerical simulation result, a quasi-physical compact model is proposed by combining the classical diode equation and simplified bipolar device formulation. This model results in accurate calculation of different leakage current components with parameter setting. Furthermore, the presented model is an open model structure, and can be applied in different fabrication process with the parameter extraction. All these characteristics make it useful in further study of physical mechanism of carrier transmissions in order to illustrate the device physics of such an array diode device.
Keywords :
bipolar memory circuits; diodes; phase change memories; array diode device; carrier transmission; compact diode array model; fabrication process; leakage current component; numerical simulation; open model structure; parameter extraction; phase change memory; quasi-physical compact model; simplified bipolar device formulation; Variable speed drives; Voltage control; PCM; PN diode array; physical compact model;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713734
