Dielectric Properties of PCB Embedded Bismuth-Zinc-Niobate Films Prepared by RF Magnetron Sputtering

Author

Lee, Seung Eun ; Lee, Jung Won ; Song, Byung Ik ; Lee, Inhyung ; Chung, Yul Kyo

Author_Institution

Corp. R&D Inst., Samsung Electro-Mech. Co. Ltd., Suwon, South Korea

fYear

2008

fDate

9-12 Dec. 2008

Firstpage

1427

Lastpage

1430

Abstract

A novel bismuth zinc niobate (Bi_1.5Zn_1.0Nb_1.5O₇, BZN) thin film was studied as an embedded capacitor. The BZN thin films were prepared on copper based substrate by RF sputtering, which is compatible with low-temperature PCB processing. The films without any heat treatment were composed of an amorphous phase. Dielectric properties of the BZN thin films measured using Au/BZN/Cu structure were strongly dependent on deposition conditions. Very high dielectric constant of 87 was obtained for the BZN thin films even though they are in amorphous phase. The capacitance density and leakage current were 218 nF/cm² and less than 1 uA/cm² at 3 V, respectively. The process-compatibility of BZN thin films with PCB process was also studied.

Keywords

bismuth compounds; capacitors; copper; permittivity; printed circuits; sputtering; thin films; zinc compounds; Bi_1.5ZnNb_1.5O₇; Cu; PCB embedded bismuth-zinc-niobate thin films; RF magnetron sputtering; amorphous phase; capacitance density; copper based substrate; deposition; dielectric constant; embedded capacitor; heat treatment; leakage current; low-temperature PCB processing; printed circuit boards; voltage 3 V; Amorphous magnetic materials; Amorphous materials; Bismuth; Copper; Dielectric substrates; Dielectric thin films; Magnetic properties; Radio frequency; Sputtering; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th

Conference_Location

Singapore

Print_ISBN

978-1-4244-2117-6

Electronic_ISBN

978-1-4244-2118-3

Type

conf

DOI

10.1109/EPTC.2008.4763631

Filename

4763631