Title :
Analytical modeling of read stability metric of SRAM cell in nanoscale era
Author :
Ebrahimi, Behzad ; Aghababa, Hossein ; Afzali-Kusha, Ali
Author_Institution :
Nanoelectron. Center of Excellence, Univ. of Tehran, Tehran, Iran
Abstract :
In this paper, we propose an analytical model for read stability metric (read margin) of sub-45nm SRAM cells. First, analytical expressions for Vread and Vtrip of the cell are derived. The expressions are obtained using a simple model for the I-V characteristics of the transistors valid for sub-45nm technologies. The I-V model, which is based on the n-th power model, has integer powers of voltage. The accuracy of the analytical model is verified by comparing its results with those of HSPICE simulations. The results show a very good accuracy for the proposed model for a wide range of transistor sizes. The accuracy of the models is also verified in the presence of threshold voltage fluctuations.
Keywords :
SRAM chips; nanoelectronics; transistors; I-V characteristics; SRAM cell; analytical modeling; nanoscale era; read stability metric; threshold voltage fluctuation; transistors; Accuracy; Analytical models; Integrated circuit modeling; Mathematical model; Random access memory; Stability analysis; Transistors; Modeling; Read Stability; SRAM; Sub 45-nm;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713747
