Analytical modeling of read stability metric of SRAM cell in nanoscale era

Author

Ebrahimi, Behzad ; Aghababa, Hossein ; Afzali-Kusha, Ali

Author_Institution

Nanoelectron. Center of Excellence, Univ. of Tehran, Tehran, Iran

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

In this paper, we propose an analytical model for read stability metric (read margin) of sub-45nm SRAM cells. First, analytical expressions for V_read and V_trip of the cell are derived. The expressions are obtained using a simple model for the I-V characteristics of the transistors valid for sub-45nm technologies. The I-V model, which is based on the n-th power model, has integer powers of voltage. The accuracy of the analytical model is verified by comparing its results with those of HSPICE simulations. The results show a very good accuracy for the proposed model for a wide range of transistor sizes. The accuracy of the models is also verified in the presence of threshold voltage fluctuations.

Keywords

SRAM chips; nanoelectronics; transistors; I-V characteristics; SRAM cell; analytical modeling; nanoscale era; read stability metric; threshold voltage fluctuation; transistors; Accuracy; Analytical models; Integrated circuit modeling; Mathematical model; Random access memory; Stability analysis; Transistors; Modeling; Read Stability; SRAM; Sub 45-nm;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713747

Filename

5713747