Title :
High-efficiency GaAs solar cells grown on passive-Ge substrates by atmospheric pressure OMVPE
Author :
Chen, J.C. ; Ristow, M. Ladle ; Cubbage, J.I. ; Werthen, J.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., Baltimore Campus, MD, USA
Abstract :
High-efficiency (up to 19%, AM0) GaAs solar cells on passive-Ge substrates have been grown by an atmospheric pressure OMVPE. A systematic study was carried out to find the optimum growth conditions. Results indicate that only a narrow temperature window (600-630°C) for the initial layer growth will give the passive-Ge junction together with good GaAs solar cells
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor epitaxial layers; semiconductor growth; solar cells; vapour phase epitaxial growth; 19 percent; 600 to 630 degC; AM0; atmospheric pressure OMVPE; passive Ge substrates; Gallium arsenide; Heterojunctions; Inductors; Lattices; Photonic band gap; Photovoltaic cells; Power generation; Solar power generation; Temperature; Thermal expansion;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169196
