Drastically improved performance in poly-Si TFTs with channel dimensions comparable to grain size

Author

Yamauchi, N. ; Hajjar, J.-J. ; Reif, R.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

353

Lastpage

356

Abstract

Poly-Si thin-film transistors (TFTs) with channel dimensions (width, W, and length, L) comparable to the grain size of the film were fabricated and characterized. The grain size of the film was enhanced by Si ion implantation followed by a low-temperature anneal. A remarkable improvement was observed in the device performance as the channel dimensions decreased to W=L=2 mu m. The TFTs with submicron channel dimensions were characterized by an extremely abrupt switching in their transfer characteristic. The improvement was attributed to the floating-body effect as well as the minimization of the grain boundary effect. It is believed that the results obtained will have impact in the development of large-area devices such as active-matrix liquid-crystal displays and image sensors with on-glass circuits.<>

Keywords

elemental semiconductors; grain size; ion implantation; silicon; thin film transistors; 2 micron; Si; TFTs; abrupt switching; active-matrix liquid-crystal displays; channel dimensions; floating-body effect; grain boundary effect; grain size; image sensors; ion implantation; large-area devices; on-glass circuits; submicron channel dimensions; transfer characteristic; Active matrix liquid crystal displays; Annealing; Circuits; Grain boundaries; Grain size; Image sensors; Ion implantation; Minimization; Semiconductor films; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74296

Filename

74296