Title :
2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications
Author :
Rasmi, Amiza ; Rose, M. Rafie Che ; Abdul Rahim, Ahmad Ismat ; Marzuki, Arjuna
Author_Institution :
TM Innovation Centre, TM R&D Sdn Bhd, Cyberjaya, Malaysia
Abstract :
This paper describes the design and measurement of a medium power amplifier (MPA) using 0.15 μm GaAs PHEMT technology for wireless application. At 2.4 GHz and 3.0 V of VDS, a fabricated MPA exhibits a P1dB of 15.20 dBm, PAE of 12.70% and gain of 9.70 dB. The maximum current, Imax is 84.40 mA and the power consumption for this device is 253.20 mW. The die size of this amplifier is 1.2 mm × 0.7 mm.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave amplifiers; power amplifiers; wireless LAN; PHEMT medium power amplifier; current 84.4 mA; efficiency 12.7 percent; frequency 2.4 GHz; gain 9.7 dB; power 253.2 mW; size 0.15 mum; voltage 3 V; wireless LAN applications; CMOS integrated circuits; Gain; Gallium arsenide; Impedance matching; PHEMTs; Power amplifiers; Power generation; 2.4 GHz; GaAs PHEMT; medium power amplifier; wireless LAN applications;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713754
