A dual band CMOS receiver with hybrid down conversion mixer for IEEE 802.11a/b/g/n WLAN applications

Author

Han, Dong-Ok ; Kim, Jeong-Hoon ; Park, Sang-Gyu

Author_Institution

Central R&D Inst., Samsung Electro-Mech., Su-Won, South Korea

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

A low power dual band fully integrated receiver incorporating IEEE 802.11a/b/g/n WLAN standards was manufactured using 0.13μm CMOS technology. In this paper, the proposed hybrid mixer, which uses both double- and direct-conversion architecture, operates in the 5GHz band in order to eliminate the need for high LO frequency generators. This hybrid mixer is a small low power device that shares a 2.4GHz LNA inductor with the first 5G band mixer. The receiver is operated with a single-ended 1.2V supply demanding only 77mA at the 2.4GHz and 90mA at the 5GHz bands. The error vector magnitude is 3.4%/3.1% at the 2.4GHz/5GHz bands, respectively.

Keywords

CMOS integrated circuits; inductors; microwave mixers; microwave receivers; telecommunication standards; wireless LAN; 5G band mixer; CMOS technology; IEEE 802.11a/b/g/n WLAN applications; LNA inductor; current 77 mA; current 90 mA; dual band CMOS receiver; frequency 2.4 GHz; frequency 5 GHz; hybrid down conversion mixer; size 0.13 mum; voltage 1.2 V; CMOS integrated circuits; Dual band; Inductors; Mixers; OFDM; Receivers; Wireless LAN; 802.11a/b/g/n; DC offset cancellation; Hybrid mixer; OFDM; Sharing; WLAN; direct-conversion; double-conversion; dual band; low power;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713756

Filename

5713756