DocumentCode :
2521697
Title :
Bipolar switching analysis and negative resistance phenomenon in TiOx-based devices
Author :
Wang, Linkai ; Jia, Ze ; Ren, Tianling
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
fYear :
2010
fDate :
15-17 Dec. 2010
Firstpage :
1
Lastpage :
3
Abstract :
This work addresses the negative resistance phenomenon in TiOx-based resistive-switching cells applied in RRAM. The switching behavior of the Ag (or Pt, top)/TiOx/Pt (bottom) structure was also carefully analyzed. The negative resistance phenomenon and switching behavior can be modeled to space-charge-limited conduction (SCLC) mechanism with asymmetric electron trapping centers. A two-variable model based on SCLC is also proposed.
Keywords :
negative resistance; random-access storage; titanium compounds; RRAM; TiOx; asymmetric electron trapping centers; bipolar switching analysis; negative resistance phenomenon; resistive switching memory; resistive-switching cells; space-charge-limited conduction mechanism; two-variable model; Conductivity; Electrodes; Resistors; Switches; TiOx; asymmetric electron trap; negative resistance; space-charge-limited conduction (SCLC);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
Type :
conf
DOI :
10.1109/EDSSC.2010.5713758
Filename :
5713758
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2521697
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