DocumentCode :
252174
Title :
0.7 V supply, 8 nW, 8 ppm/°C resistorless sub-bandgap voltage reference
Author :
Mattia, Oscar E. ; Klimach, Hamilton ; Bampi, Sergio
Author_Institution :
Microelectron. Grad. Program, Fed. Univ. of Rio Grande do Sul, Porto Alegre, Brazil
fYear :
2014
fDate :
3-6 Aug. 2014
Firstpage :
479
Lastpage :
482
Abstract :
In this work a new resistorless sub-bandgap voltage reference topology is presented. It is a self-biased and small area circuit that works in the nano-ampere consumption range, and under 1 V of power supply. The behavior of the circuit is analitically described, a design methodology is proposed and simulation results are presented for a standard 0.18 μm CMOS proCess. A reference voltage of 463 mV is demonstrated, with a temperature coefficient of 8 ppm/°C for the 0 to 125 °C range, while the power consumption of the whole circuit is 8.25 nW under a 0.75 V power supply at 27 °C. The estimated silicon area is 0.0043 mm2.
Keywords :
CMOS integrated circuits; integrated circuit design; reference circuits; CMOS process; nano-ampere consumption range; power 8 W; power 8.25 nW; power consumption; resistorless sub-bandgap voltage reference topology; self-biased circuit; size 0.18 mum; small area circuit; temperature 0 degC to 125 degC; temperature coefficient; voltage 0.7 V; voltage 0.75 V; voltage 1 V; voltage 463 mV; Logic gates; MOSFET; Power demand; Threshold voltage; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
Conference_Location :
College Station, TX
ISSN :
1548-3746
Print_ISBN :
978-1-4799-4134-6
Type :
conf
DOI :
10.1109/MWSCAS.2014.6908456
Filename :
6908456
Link To Document :
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