Title :
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO2 stack gate dielectric
Author :
Zou, Xiao ; Xu, J.P. ; Lai, P.T. ; Li, Yao ; Ji, Feng ; Deng, L.F.
Author_Institution :
Dept. of Electromachine Eng., Jianghan Univ., Wuhan, China
Abstract :
Al-doped ZnO (AZO) thin film was deposited by radio-frequency reactive sputtering under different Ar/O2 ratios, and its electrical properties were investigated. The AZO film with relatively low carrier concentration and high Hall mobility was used as the active channel, and bottom-gate top-contact AZO TFTs with high-κ HfON/SiO2 stack gate dielectric were fabricated. The AZO TFT (W/L = 500/40 μm) showed electrical characteristics with a drain current of 1.9 μA, a saturation mobility of 1.66 cm2/Vs, a threshold voltage of 2.1 V, a subthreshold swing of 2.7 V/dec, and an on/off current ratio of 5×102. Also, the saturation mobility of the AZO TFT with HfON/SiO2 stacked gate dielectric has been improved by one order of magnitude compared to previous work.
Keywords :
Hall mobility; II-VI semiconductors; aluminium; carrier density; hafnium compounds; high-k dielectric thin films; semiconductor doping; silicon compounds; sputter deposition; thin film transistors; zinc compounds; Hall mobility; HfON-SiO2; ZnO-channel thin-film transistor; ZnO:Al; bottom-gate top-contact AZO TFT; carrier concentration; current 1.9 muA; drain current; electrical properties; high-k stack gate dielectric; radiofrequency reactive sputtering; saturation mobility; subthreshold swing; thin film deposition; threshold voltage; voltage 2.1 V; Argon; Electrodes; Films; Optical device fabrication; Saturation magnetization; Thin film transistors; X-ray scattering; Al-doped ZnO; HfON; saturation mobility; thin-film transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713770
