Varying sputtering ambient and annealing gas to optimize the electrical properties of MOS capacitor with HfLaO gate dielectric

Author

Tao, Q.B. ; Lai, P.T.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

The impact of sputtering ambient on the properties of HfLaO film is studied by varying the ratio of Ar to O₂. In order to optimize the electrical performances, the HfLaO film is then annealed in N₂, NO or NH₃ and evaluated based on Si MOS capacitors. As a result, appropriate ratio of Ar to O₂ during sputtering can increase the permittivity of film while the NH₃ annealing can improve its properties.

Keywords

MOS capacitors; ammonia; annealing; argon; dielectric materials; hafnium compounds; lanthanum compounds; nitrogen compounds; permittivity; semiconductor thin films; sputtering; Ar; HfLaO; MOS capacitor; N₂; NH3 annealing; NH₃; NO; Si; ambient sputtering; electrical property optimisation; film permittivity; gas annealing; gate dielectric; Annealing; Artificial intelligence; Hafnium compounds; Lead; Logic gates; MOSFET circuits; Silicon compounds; HfLaO film; gate leakage; interface-state density; permittivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713772

Filename

5713772