• DocumentCode
    2522006
  • Title

    Output-capacitor-free adaptively biased low-dropout regulators

  • Author

    Zhan, Chenchang ; Ki, Wing-Hung

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
  • fYear
    2010
  • fDate
    15-17 Dec. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents the design and experimental characterization of two output-capacitor-free adaptively biased low-dropout regulators (AB LDRs) for system-on-chip applications. The low-voltage high-precision AB LDRs adopt Miller compensation and Q-reduction technique to achieve high stability over a wide load current range, without relying on a large off-chip capacitor. The first implementation of adaptive biasing uses a simple current mirror and is more area efficient; the second one uses a symmetrically matched current-voltage mirror and achieves more accurate sensing of load current. The design considerations and stability strategies are discussed. The two AB LDRs and their counterpart, a fixed-biased LDR, are fabricated using a standard 0.35-μm CMOS process. The minimum input voltage is 1.2 V, the preset output voltage is 1.0 V and the maximum load current is 100 mA. Measurement results verify that the AB LDRs improve the line and load transient responses and power supply rejections significantly, while maintaining tight regulation, low quiescent current and high current efficiency.
  • Keywords
    CMOS integrated circuits; current mirrors; system-on-chip; transient response; voltage regulators; CMOS process; Miller compensation; Q-reduction technique; adaptive biasing; current 100 mA; current mirror; load transient response; low-dropout regulators; off-chip capacitor; output capacitor free; power supply rejections; quiescent current; size 0.35 mum; symmetrically matched current-voltage mirror; system-on-chip; voltage 1.0 V; voltage 1.2 V; Capacitors; Current measurement; Regulators; Stability analysis; System-on-a-chip; Transient analysis; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-9997-7
  • Type

    conf

  • DOI
    10.1109/EDSSC.2010.5713774
  • Filename
    5713774