DocumentCode :
252216
Title :
Design of RF amplifier with enhanced performance
Author :
Ali, M.T. ; Ruiheng Wu
Author_Institution :
Sch. of Eng., Univ. of Greenwich, Chatham, UK
fYear :
2014
fDate :
3-6 Aug. 2014
Firstpage :
575
Lastpage :
578
Abstract :
In this paper, a RF CMOS amplifier is designed on the basis of a novel negative impedance linearization technique with negative differential resistance (NDR) element. The simulation results show that the designed amplifier can achieve high gain accuracy, good linearity with improved efficiency, revealing that the proposed technique could find wider application in RF/Microwave circuits and systems.
Keywords :
CMOS analogue integrated circuits; radiofrequency amplifiers; NDR element; RF CMOS amplifier design; RF-microwave circuits; RF-microwave systems; gain accuracy; negative differential resistance element; negative impedance linearization technique; Accuracy; CMOS integrated circuits; Impedance; Linearization techniques; Microwave amplifiers; Radio frequency; Transistors; CMOS amplifier; NDR; RF feedback; linearization; negative impedance compensation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
Conference_Location :
College Station, TX
ISSN :
1548-3746
Print_ISBN :
978-1-4799-4134-6
Type :
conf
DOI :
10.1109/MWSCAS.2014.6908480
Filename :
6908480
Link To Document :
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