A simple physically based model of temperature effect on drain current for nanoscale TFET

Author

Shoron, Omor Faruk ; Siddiqui, Saima Afroz ; Zubair, Ahmad ; Khosru, Q.D.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

Temperature dependency of ballistic double gate tunnel field effect transistors (TFET) have been examined for the first time using Si and GaAs as channel material. I-V characteristics have been simulated using Kane´s model of band-to-band tunneling (BTBT). It has been found that off current is more sensitive to temperature variation than on current. Moreover, this temperature dependency is also a function of device scaling which has been discussed in the present work. Besides a simple physical based model has been proposed that can predict the drain current with temperature over wide range (250K - 500 K for Si and 300K- 450K for GaAs).

Keywords

III-V semiconductors; elemental semiconductors; field effect transistors; gallium arsenide; silicon; tunnelling; GaAs; Kane model; Si; ballistic double gate tunnel field effect transistors; band-to-band tunneling; channel material; device scaling function; drain current; nanoscale TFET; temperature 250 K to 500 K; temperature dependent; temperature effect; Gallium arsenide; Logic gates; Silicon; Temperature; Temperature dependence; Temperature sensors; Tunneling; Band to band tunneling; Kane´s model; double gate; temperature dependancy; tunnel field effect transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713783

Filename

5713783