A nonlinear PIN diode model for use in multi-diode microwave and RF communication circuit simulation

Author

Caverley, R.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Southeastern Massachusetts Univ., North Dartmouth, MA

fYear

1988

fDate

7-9 Jun 1988

Firstpage

2295

Abstract

A nonlinear p-i-n diode model suitable for use in microwave and RF communication circuit simulation is presented. The circuit nonlinear transfer functions are computed and verified with experimental distortion measurements on series and shunt reflective attenuators. These transfer functions are useful in circuit and device simulation since they are algebraic in nature and require minimal computation time. The model presented is applicable to both gallium arsenide and silicon p-i-n diodes, in packaged, beam lead or chip form

Keywords

circuit analysis computing; nonlinear network analysis; p-i-n diodes; semiconductor device models; solid-state microwave devices; GaAs diodes; RF communication circuit simulation; Si diodes; circuit nonlinear transfer functions; device simulation; experimental distortion measurements; minimal computation time; multidiode microwave circuit simulation; nonlinear PIN diode model; nonlinear p-i-n diode model; packaged diodes; series reflective attenuation; shunt reflective attenuators; Attenuators; Circuit simulation; Computational modeling; Distortion measurement; Gallium arsenide; Microwave communication; Microwave devices; P-i-n diodes; Radio frequency; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo

Type

conf

DOI

10.1109/ISCAS.1988.15403

Filename

15403