Title :
Modeling of current gain versus recombination in double base epilayer 4H-SiC BJTs
Author :
Zhang, Qian ; Zhang, Yuming ; Zhang, Yimen ; Wang, Yuehu
Author_Institution :
Nat. Defense Key Discipline Lab. of Wide Band-gap Semicond. Technol., Xidian Univ., Xi´´an, China
Abstract :
Based on the material characteristics and the carrier recombination theory, the common emitter current gain of the double base epilayer BJTs is modeled and calculated when considering four recombination processes. The results show that the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity, and make an obvious current gain fall-off at a high collector current.
Keywords :
bipolar transistors; silicon compounds; surface recombination; wide band gap semiconductors; BJT; SiC-SiO2; carrier recombination theory; current gain; double base epilayer; high collector current; interface states; material characteristics; passivation layer; surface recombination velocity; Artificial neural networks; Educational institutions; Neodymium; Silicon; 4H-SiC; Bipolar Junction Transistors(BJTs); carrier recombination; current gain;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713784
