Title :
Heterogeneous integration of DC-DC power converters
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
Abstract :
To achieve the highest power conversion efficiency, heterogeneous chip-scale integration of silicon-based and GaN-based power switches with SiC power diodes, silicon CMOS control IC, MEMS inductor and micro microchip supercapacitor assembled using advanced packaging and microcooling is reported.
Keywords :
CMOS integrated circuits; DC-DC power convertors; III-V semiconductors; cooling; electronics packaging; elemental semiconductors; gallium compounds; inductors; micromechanical devices; power semiconductor diodes; power semiconductor switches; silicon; silicon compounds; supercapacitors; wide band gap semiconductors; DC-DC power converters; GaN; GaN-based power switches; MEMS inductor; Si; SiC; SiC power diodes; advanced packaging; heterogeneous chip-scale integration; microcooling; micromicrochip supercapacitor; power conversion efficiency; silicon CMOS control IC; silicon-based power switches; CMOS integrated circuits; Converters; Gallium nitride; Inductors; Logic gates; Schottky diodes; Silicon; DC-DC converter; GaN FET; MEMS inductor; SiC power diode; chip-scale integration; microcooler; packaging; silicon CMOS control IC;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713790
