DocumentCode :
252235
Title :
A 39.7 dBm and 18.5% PAE compact X to Ku band GaN Travelling Wave Amplifier
Author :
Dupuy, Victor ; Kerherve, Eric ; Deltimple, Nathalie ; Plaze, Jean-Philippe ; Dueme, Philippe ; Mallet-Guy, Benoit ; Mancuso, Y.
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
fYear :
2014
fDate :
3-6 Aug. 2014
Firstpage :
611
Lastpage :
614
Abstract :
This article presents an 8GHz to 18GHz Travelling Wave Amplifier (TWA) averaging 39.7dBm of output power and 18.5% Power Added Efficiency (PAE). At 11 GHz, the TWA reaches a peak output power 40.4dBm and a peak PAE of 22%. The proposed architecture consists in the combination of two TWAs in parallel to increase output power. An innovative low loss compact power combiner is proposed to reduce the overall die size and keep high PAE. The amplifier presented here has the advantage to be very compact compared to similar MMICs High Power Amplifiers (HPA). An innovative design methodology based on a strong correlation between the amplifier and the combiner design is introduced.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; power combiners; travelling wave amplifiers; wide band gap semiconductors; GaN; MMIC HPA; PAE; compact X to Ku band TWA; efficiency 18.5 percent; efficiency 22 percent; frequency 8 GHz to 18 GHz; high power amplifiers; innovative low loss compact power combiner; power added efficiency; travelling wave amplifier; Bandwidth; Gallium nitride; Impedance matching; MMICs; Power amplifiers; Power combiners; Power generation; GaN; MMIC; Power combining; TWA;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
Conference_Location :
College Station, TX
ISSN :
1548-3746
Print_ISBN :
978-1-4799-4134-6
Type :
conf
DOI :
10.1109/MWSCAS.2014.6908489
Filename :
6908489
Link To Document :
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