DocumentCode
2522563
Title
Study of THz radiation from InAs and InSb surfaces under high magnetic fields
Author
Nakajima, M. ; Takahashi, M. ; Hangyo, M.
Author_Institution
Res. Center for Supercond. Photonics, Osaka Univ., Japan
fYear
2002
fDate
26-26 Sept. 2002
Firstpage
19
Lastpage
20
Abstract
The magnetic field dependence of the THz radiation from InAs and InSb surfaces is studied up to 5 tesla. The intensity and spectra for horizontally and vertically polarized components of the THz radiation shows characteristic changes with magnetic field intensity. These results are discussed in relation to the photoexcited carrier dynamics.
Keywords
III-V semiconductors; electromagnetic wave polarisation; indium compounds; laser beam effects; magnetic field effects; submillimetre wave generation; 5 tesla; InAs; InAs surface; InSb; InSb surface; THz radiation; high magnetic fields; laser pulse excitation; magnetic field dependence; photoexcited carrier dynamics; polarization; radiation intensity; Frequency; Intrusion detection; Laser excitation; Magnetic fields; Optical pulses; Optical surface waves; Polarization; Saturation magnetization; Superconducting magnets; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-7423-1
Type
conf
DOI
10.1109/ICIMW.2002.1076063
Filename
1076063
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