Title :
Novel fabrication of integrated submillimeter circuits
Author :
Nye, K.W. ; Qun Xiao ; Hesler, J.L. ; Crowe, T.W.
Author_Institution :
Appl. Electrophys. Lab., Virginia Univ., Charlottesville, VA, USA
Abstract :
Backside wafer processing has been developed for discrete beamlead diodes and beamlead MMICs. Backside etching allows arbitrary substrate geometry. The beamleads are used to make electrical connections to a waveguide block and/or serve as substrateless transmission lines. The fabrication of an 82.5 to 330 GHz MMIC balanced frequency quadrupler is presented.
Keywords :
III-V semiconductors; MIMIC; Schottky diodes; etching; frequency multipliers; gallium arsenide; high-frequency transmission lines; integrated circuit interconnections; integrated circuit manufacture; planar waveguides; submillimetre wave integrated circuits; varistors; 82.5 to 330 GHz; GaAs; GaAs sub-mm IC fabrication; MIMIC; MMIC balanced frequency quadrupler; Schottky diodes; arbitrary substrate geometry; backside etching; backside wafer processing; beamlead MMIC; discrete beamlead diodes; frequency multipliers; integrated submillimeter circuits; planar diodes; substrateless transmission lines; varistors; waveguide block electrical connections; Anodes; Circuits; Etching; Fabrication; Frequency; Gallium arsenide; MMICs; Resists; Schottky diodes; Silicon compounds;
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
DOI :
10.1109/ICIMW.2002.1076086
