• DocumentCode
    2523020
  • Title

    Methods of investigation of the properties of the optoelectronic devices with use of atomic force microscopy

  • Author

    Gajewski, Krzysztof ; Wielgoszewski, Grzegorz

  • Author_Institution
    Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
  • fYear
    2010
  • fDate
    25-27 June 2010
  • Firstpage
    18
  • Lastpage
    20
  • Abstract
    In the modern world, the influence the optoelectronic devices on the communications methods are still increasing. Therefore it is very important to And appropriate techniques for design, building, testing, measuring and packaging. The measurement techniques of these devices in nanometer scale help us to solve problems like the quality of the device layers and give us comparison of modeling and experimental results. In this article we present selected techniques of measurement of the optoelectronic devices like solar cells, lasers or photodiodes. We describe techniques like Kelvin probe force microscopy, electrostatic force microscopy and example results obtained in our laboratory.
  • Keywords
    atomic force microscopy; lasers; optoelectronic devices; photodiodes; solar cells; Kelvin probe force microscopy; atomic force microscopy; electrostatic force microscopy; lasers; optoelectronic devices; photodiodes; solar cells; Laser modes; Measurement by laser beam; Microscopy; Surfaces;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Students and Young Scientists Workshop, 2010 IEEE International
  • Conference_Location
    Szklarska Poreba
  • Print_ISBN
    978-1-4244-8324-2
  • Type

    conf

  • DOI
    10.1109/STYSW.2010.5714160
  • Filename
    5714160