DocumentCode
2523020
Title
Methods of investigation of the properties of the optoelectronic devices with use of atomic force microscopy
Author
Gajewski, Krzysztof ; Wielgoszewski, Grzegorz
Author_Institution
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
fYear
2010
fDate
25-27 June 2010
Firstpage
18
Lastpage
20
Abstract
In the modern world, the influence the optoelectronic devices on the communications methods are still increasing. Therefore it is very important to And appropriate techniques for design, building, testing, measuring and packaging. The measurement techniques of these devices in nanometer scale help us to solve problems like the quality of the device layers and give us comparison of modeling and experimental results. In this article we present selected techniques of measurement of the optoelectronic devices like solar cells, lasers or photodiodes. We describe techniques like Kelvin probe force microscopy, electrostatic force microscopy and example results obtained in our laboratory.
Keywords
atomic force microscopy; lasers; optoelectronic devices; photodiodes; solar cells; Kelvin probe force microscopy; atomic force microscopy; electrostatic force microscopy; lasers; optoelectronic devices; photodiodes; solar cells; Laser modes; Measurement by laser beam; Microscopy; Surfaces;
fLanguage
English
Publisher
ieee
Conference_Titel
Students and Young Scientists Workshop, 2010 IEEE International
Conference_Location
Szklarska Poreba
Print_ISBN
978-1-4244-8324-2
Type
conf
DOI
10.1109/STYSW.2010.5714160
Filename
5714160
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