Title :
Minority carrier lifetime in indium phosphide
Author :
Jenkins, Phillip ; Landis, Geoffrey A. ; Weinberg, Irving ; Kneisel, K.
Author_Institution :
Sverdrup Technology Inc., Brook Park, OH, USA
Abstract :
Transient photoluminescence has been used to measure the minority carrier lifetime on n-type and p-type InP wafers. The measurements show that unprocessed InP wafers have very high minority carrier lifetimes. Lifetimes of 200 ns and 700 ns were observed for lightly-doped p and n-type material respectively. Lifetimes over 5 ns were found in heavily doped n-type material
Keywords :
III-V semiconductors; carrier lifetime; indium compounds; minority carriers; solar cells; InP solar cells; minority carrier lifetime; n-type wafers; p-type wafers; transient photoluminescence; Charge carrier lifetime; Equations; Indium phosphide; Oscilloscopes; Photoluminescence; Photovoltaic cells; Pulsed power supplies; Radiative recombination; Semiconductor process modeling; Surface emitting lasers;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169204
