DocumentCode
2523380
Title
Adding analog, EPROM and EEPROM modules to CMOS logic technology: how modular?
Author
Paterson, J.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1989
fDate
3-6 Dec. 1989
Firstpage
413
Lastpage
416
Abstract
The issue of modularity (design, process, manufacturing, reliability) in the addition of analog (resistor and capacitor), EPROM (electrically programmable ROM) (12.5-V isolation and cell), and EEPROM (electrically erasable programmable ROM) (18-V isolation, 18-V transistor and cell) modules to core CMOS technologies is discussed. Design modularity permits the design of complex circuits using standard cell logic libraries, process modularity simplifies the task of creating and executing the process flow, manufacturing modularity defines the incremental equipment requirements, and reliability modularity eliminates the need to requalify the core process. Three specific examples are described, including an 18-V EEPROM module for a 1.6- mu m CMOS core for an 8-b microcontroller with EPROM and EEPROM; a 5-V analog module for a 1.0- mu m CMOS core for a 10-b switched-capacitor, analog-to-digital converter (ADC); and a 10-V EEPROM module for a 0.8- mu m CMOS core for a EPROM programmable array logic device.<>
Keywords
CMOS integrated circuits; EPROM; analogue-digital conversion; application specific integrated circuits; digital integrated circuits; integrated circuit technology; logic arrays; microcontrollers; modules; 0.8 micron; 1 micron; 1.6 micron; 10 bit; 12.5 V; 18 V; 5 V; 8 bit; CMOS logic technology; EEPROM modules; EPROM programmable array logic device; analog module; analog-to-digital converter; complex circuits; core process; design modularity; incremental equipment requirements; manufacturing modularity; microcontroller; process modularity; reliability modularity; standard cell logic libraries; switched-capacitor; CMOS logic circuits; CMOS technology; Capacitors; EPROM; Isolation technology; Manufacturing processes; Process design; Programmable logic arrays; Read only memory; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74310
Filename
74310
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