• DocumentCode
    252359
  • Title

    A low noise CMOS readout front end for MEMs BioPotential sensor applications

  • Author

    Mohamed, Ahmed N. ; Ahmed, Hesham N.

  • Author_Institution
    Electron. Eng. Dept., Mil. Tech. Coll., Cairo, Egypt
  • fYear
    2014
  • fDate
    3-6 Aug. 2014
  • Firstpage
    868
  • Lastpage
    871
  • Abstract
    In this paper, a low-noise CMOS readout front end for biopotential acquisition applications is presented. The proposed circuit, implemented using 130 nm standard CMOS process, has a thermal noise floor of 10 nV/√Hz, a corner frequency of 300 mHz, and dissipates 3.2μW of power when powered using a 1 V supply. The designed circuit occupies a die area of 0.007mm2 and thus renders itself as an excellent candidate for acquiring biopotential signals through MEMS sensors.
  • Keywords
    CMOS integrated circuits; biosensors; microsensors; readout electronics; thermal noise; MEMS biopotential sensor; biopotential acquisition; frequency 300 mHz; low noise CMOS readout front end; power 3.2 muW; size 130 nm; thermal noise floor; voltage 1 V; Biosensors; CMOS integrated circuits; Choppers (circuits); Layout; Micromechanical devices; Noise; capacitively coupled instrumentation amplifier; charge injection; chopper amplifier; clock feedthrough; flicker noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
  • Conference_Location
    College Station, TX
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4799-4134-6
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2014.6908553
  • Filename
    6908553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=252359