Title :
Fabrication of integrated THz sources
Author :
Schoenthal, G.S. ; Bishop, W.L. ; Haiyong Xu ; Hesler, J.L. ; Weikle, R.M., II ; Crowe, T.W.
Author_Institution :
Appl. Electrophys. Lab., Virginia Univ., Charlottesville, VA, USA
Abstract :
Fabrication methods for integrated, GaAs-on-Quartz, Schottky based sideband generators and frequency multipliers operating at 200 GHz and 600 GHz are discussed. Important attributes include sub-micron anodes, air-bridged Schottky contacts, epitaxial layer bonding, low temperature (<200/spl deg/C) processing, and quasi-ohmic contacts. Photos of completed circuits and test results are presented.
Keywords :
III-V semiconductors; Schottky barriers; circuit CAD; circuit simulation; circuit tuning; frequency multipliers; gallium arsenide; integrated circuit design; integrated circuit manufacture; integrated circuit modelling; ohmic contacts; submillimetre wave generation; submillimetre wave integrated circuits; wafer bonding; 200 C; 200 GHz; 600 GHz; GaAs-SiO/sub 2/; GaAs-on-quartz Schottky based sideband generators; GaAs-on-quartz integrated THz source fabrication; air-bridged Schottky contacts; epitaxial layer bonding; frequency multipliers; low temperature processing; quasi-ohmic contacts; sub-micron anodes; tunable submm-wave sources; Anodes; Circuit simulation; Circuit testing; Etching; Fabrication; Frequency; Gallium arsenide; Power generation; Schottky diodes; Tunable circuits and devices;
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
DOI :
10.1109/ICIMW.2002.1076117
