DocumentCode :
2523959
Title :
Infrared detection of carrier dynamics in indium antimonide in megagauss fields
Author :
Hansel, S. ; Kirste, Alexander ; Mueller, H.-U. ; von Ortenberg, M. ; Huseynov, E.
Author_Institution :
Humboldt-Univ., Berlin, Germany
fYear :
2002
fDate :
26-26 Sept. 2002
Firstpage :
171
Lastpage :
172
Abstract :
We report on magnetotransmission measurements of 10.6 μm radiation through bulk InSb in transient megagauss field pulses. The half period of about 6 μs of the oscillating field is comparable to the characteristic relaxation time in the material. Field reversal between the oscillations demonstrates the strong influence of the "history" of the state population within the relaxation time.
Keywords :
III-V semiconductors; carrier mobility; indium compounds; infrared detectors; infrared spectra; magnetic field effects; relaxation; 10.6 micron; 6 mus; InSb; bulk InSb; characteristic relaxation time; field reversal; magnetotransmission measurements; oscillating field; state population; transient megagauss field pulses; Chromium; Cyclotrons; History; Impurities; Infrared detectors; Magnetic field measurement; Magnetic fields; Magnetic materials; Magnetic resonance; Pulse measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
Type :
conf
DOI :
10.1109/ICIMW.2002.1076139
Filename :
1076139
Link To Document :
بازگشت